Award notice
4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
80GRC025C0005
National Aeronautics and Space Administration, NASA Glenn Research Center. Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology).
Awarded
$340,317.00 on the award notice, September 18, 2025, contract 80GRC025C0005
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This one was awarded in 2025
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Description
As published on SAM.gov.
See the attached Source Selection Statement
Attachments
Files listed on SAM.gov. The ones we hold a copy of download from here; the rest open SAM's download, which needs no account.
The contract, on USAspending
Federal procurement data the awarding office reported to FPDS, matched to this solicitation by its number.
- Recipient
- General Electric Company
- UEI
- M2FYKG7HP723
- CAGE
- 28339
- Vendor location
- Niskayuna, NY
- Contract
- 80GRC025C0005, definitive contract
- Obligated
- $0.00, current value $340,317
- Actions
- 2 between September 18, 2025 and September 18, 2026
- Competition
- Full and Open Competition, 1 offer received
- Set-aside reported
- No Set Aside Used.
- Described as
- Fabrication of V12B Extreme Environment Durable 4h-Sic Silicon Carbide Jfet Ics
- Match
- award number 80GRC025C0005 equals the contract number; same awarding office 80GRC0 (high confidence)
- Record
- USAspending award page
Publications
Every notice SAM.gov issued under this solicitation number, oldest first. Each is a separate record on SAM.
September 29, 2025
Award notice, originally solicitation
Awarded to General Electric Company for $340,317. SAM.gov, notice 9ba87d892891435ebe83fe669581ba99
2 revisions on SAM
- September 29, 2025: publish, award notice
- June 27, 2025: publish, solicitation
Points of contact
- Claude Davidclaude.e.david@nasa.gov
- Brianna Lindseybrianna.lindsey@nasa.gov