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Solicitation

Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate

80NSSC26936816Q

National Aeronautics and Space Administration, NASA Shared Services Center. Semiconductor and Related Device Manufacturing.

View on SAM.govMarkdown

Awarded

Biotronics, Inc.

$85,000.00 obligated so far on USAspending

Description

As published on SAM.gov.

See the attached SOW. All correspondence should reference ID# to ensure visibility. *PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.

The contract, on USAspending

Federal procurement data the awarding office reported to FPDS, matched to this solicitation by its number.

Recipient
Biotronics, Inc.
UEI
CQJVMMKCYYR5
CAGE
3E0Z8
Vendor location
North Olmsted, OH
Contract
80NSSC26P1008, purchase order
Obligated
$85,000.00
Actions
1 between July 14, 2026 and July 14, 2026
Competition
Not Competed Under SAP, 1 offer received
Set-aside reported
No Set Aside Used.
Described as
Dry Etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate
Match
solicitation number 80NSSC26936816Q equals the FPDS solicitation identifier; same awarding office 80NSSC (high confidence)
Record
USAspending award page

Publications

Every notice SAM.gov issued under this solicitation number, oldest first. Each is a separate record on SAM.

  1. July 6, 2026

    Solicitation

    Due July 10, 2026 at 9:00 AM EDT. SAM.gov, notice 68ae1bb1385c408ea714a38ec1a30b49

Points of contact

Also open from this buyer