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Award notice

Gallium Nitride Diode Wafer Fabrication

80GRC025PA002

National Aeronautics and Space Administration, NASA Glenn Research Center. Semiconductor and Related Device Manufacturing.

Awarded

Lockheed Martin Corporation

$273,770.00 on the award notice, September 26, 2025, contract 80GRC025P0002

Description

As published on SAM.gov.

Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030. The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.

The contract, on USAspending

Federal procurement data the awarding office reported to FPDS, matched to this solicitation by its number.

UEI
LWF3QUSCDNG1
CAGE
0AYP7
Vendor location
Tewksbury, MA
Contract
80GRC025P0002, purchase order
Obligated
$394,345.00
Actions
3 between September 26, 2025 and May 27, 2026
Competition
Not Competed, 1 offer received
Set-aside reported
No Set Aside Used.
Described as
Requirement to Procure a Large Quantity of Custom Gallium Nitride (Gan) Schottky Diodes with Cutting Edge Capabilities Only Possible to Be Made at the Most Advanced Gan Foundries.
Match
award number 80GRC025P0002 equals the contract number; same awarding office 80GRC0 (high confidence)
UEI
G4KDGE4JFFK7
CAGE
81755
Vendor location
Fort Worth, TX
Contract
80GRC025PA002, purchase order
Obligated
$97,516.00
Actions
2 between August 5, 2025 and December 5, 2025
Competition
Not Competed, 1 offer received
Set-aside reported
No Set Aside Used.
Described as
Material Synthesis Ii. If More Information Is Needed, Please Contact the Co Directly.
Match
solicitation number 80GRC025PA002 equals the FPDS solicitation identifier; same awarding office 80GRC0 (high confidence)

Publications

Every notice SAM.gov issued under this solicitation number, oldest first. Each is a separate record on SAM.

  1. September 30, 2025

    Award notice

    Awarded to RAYTHEON COMPANY Tewksbury for $273,770. SAM.gov, notice 165c6a35a4bd44bfa0192c6d226ec753

Points of contact