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Award notice

Gallium Nitride Diode Wafer Fabrication

80GRC025PA002

National Aeronautics and Space Administration, NASA Glenn Research Center. Semiconductor and Related Device Manufacturing.

25 open like this View on SAM.gov Markdown

Awarded

Lockheed Martin Corporation

$273,770.00 on the award notice, September 26, 2025, contract 80GRC025P0002

Get the next one like this from National Aeronautics and Space Administration by email, the day it is posted.Find my opportunities

This one was awarded in 2025

25 like it are open now in semiconductor and related device manufacturing

  • HEATER,THERMAL RELEASE

    Defense Logistics Agency, DLA Weapons Support

    Combined synopsis and solicitationNAICS 334413Anywhere in the USSPE7M527T1295
    Closes in 2 daysNov 2
  • PANEL,BODY,VEHICULAR

    Defense Logistics Agency, DLA Weapons Support

    Combined synopsis and solicitationSmall businessNAICS 334413Anywhere in the USSPE7L327T1292
    Closes in 2 daysNov 2
  • SEMICONDUCTOR DEVICE,D

    Defense Logistics Agency, DLA Weapons Support

    Combined synopsis and solicitationSmall businessNAICS 334413Anywhere in the USSPE7M527T1291
    Closes in 2 daysNov 2

All 25 open in semiconductor and related device manufacturing

Description

As published on SAM.gov.

Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030.

The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.

Attachments

Files listed on SAM.gov. The ones we hold a copy of download from here; the rest open SAM's download, which needs no account.

The contract, on USAspending

Federal procurement data the awarding office reported to FPDS, matched to this solicitation by its number.

Recipient
Raytheon Company
UEI
LWF3QUSCDNG1
CAGE
0AYP7
Vendor location
Tewksbury, MA
Contract
80GRC025P0002, purchase order
Obligated
$941,347.00, current value $1,011,880
Actions
4 between September 26, 2025 and September 16, 2026
Competition
Not Competed, 1 offer received
Set-aside reported
No Set Aside Used.
Described as
Requirement to Procure a Large Quantity of Custom Gallium Nitride (Gan) Schottky Diodes with Cutting Edge Capabilities Only Possible to Be Made at the Most Advanced Gan Foundries.
Match
award number 80GRC025P0002 equals the contract number; same awarding office 80GRC0 (high confidence)
Record
USAspending award page
Recipient
Lockheed Martin Corporation
UEI
G4KDGE4JFFK7
CAGE
81755
Vendor location
Fort Worth, TX
Contract
80GRC025PA002, purchase order
Obligated
$97,516.00
Actions
2 between August 5, 2025 and December 5, 2025
Competition
Not Competed, 1 offer received
Set-aside reported
No Set Aside Used.
Described as
Material Synthesis Ii. If More Information Is Needed, Please Contact the Co Directly.
Match
solicitation number 80GRC025PA002 equals the FPDS solicitation identifier; same awarding office 80GRC0 (high confidence)
Record
USAspending award page

Publications

Every notice SAM.gov issued under this solicitation number, oldest first. Each is a separate record on SAM.

  1. September 30, 2025

    Award notice

    Awarded to Raytheon Company for $273,770. SAM.gov, notice 165c6a35a4bd44bfa0192c6d226ec753

    1 revisions on SAM
    • September 30, 2025: publish, award notice

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