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Special notice

Licensing Opportunity: Deterministic Atom Steering for Repeated Identical Defect Generation in the Scanning Transmission Electron Microscope

2024-09-11_B

Department of Energy, ORNL Ut-Battelle LLC-DOE Contractor.

Response deadline

October 26, 2024 at 5:00 PM EDT

Closed 691 days ago. Posted September 11, 2024. Scheduled to archive October 27, 2024.

Description

As published on SAM.gov.

Invention Reference Number: 202405646 Scanning transmission electron microscopes are useful for a variety of applications. Atomic defects in materials are critical for areas such as quantum photonics, magnetic storage, and catalysis. Traditional methods using scanning tunneling microscopes (STM) are limited by their slow speed, requirement for conductive surfaces, and low operating temperatures.

This technology provides the ability to control these defects at the atomic level and is not limited to surfaces or conductive materials, opening many new possibilities for atomic-scale manufacturing. Description This technology is a method for deterministic atom steering for repeated identical defect generation in the scanning transmission electron microscope. This enables precise defect creation in layered materials, enhancing quantum photonics, storage, and catalysis.

This technique involves the precise control of the STEM’s electron beam to move atoms from one initial position to a well-defined final position. The method relies on fast and repeated scanning of the electron probe, which allows for real-time monitoring and control of individual atomic movements. The method scans the electron probe between multiple positions to direct the movement of individual atoms and create specific defects with high precision.

It allows monitoring of atomic movements in real-time using a high speed detector, usually an annular dark or bright field detector, and maintains atomic lattice information for repeated and precise movements over large areas.

Benefits Enables the precise creation and placement of atomic defects with high fidelity Allows for real-time monitoring and adjustment of atomic movements Applicable to both 2D and 3D materials, enhancing bulk material properties Can use standard STEM with minor retrofit Maintains the material’s atomic content; prevents damage or ejection of atoms Scalable – can create large-scale patterns of atomic defects for advanced material design Applications and Industries Materials research and production STEM (scanning transmission electron microscope) manufacturers STEM users Quantum photonics Catalysis High-density memory Contact To learn more about this technology, email partnerships@ornl.gov or call 865-574-1051.

Publications

Every notice SAM.gov issued under this solicitation number, oldest first. Each is a separate record on SAM.

  1. September 11, 2024

    Special notice

    Due October 26, 2024 at 5:00 PM EDT. SAM.gov, notice a0dac7de57f24f0bad7fa245fbc91790

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