{"canonical":"https://abierto.us/opportunities/il13828","key":"IL13828","url":"https://abierto.us/opportunities/il13828","title":"TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination","solicitation_number":"IL-13828","notice_type":"s","open":false,"response_deadline":"2025-08-07T18:00:00Z","first_posted":"2025-07-07","last_posted":"2025-07-07","department":"ENERGY, DEPARTMENT OF","subagency":"ENERGY, DEPARTMENT OF","office":"LLNS – DOE CONTRACTOR","naics":"334413","psc":null,"set_aside":null,"place_state":"CA","place_county":"06001","place_county_name":"Alameda County","place_city":"0641992","place_city_name":"Livermore","winner":null,"award_amount":null,"publications":[{"notice_id":"4b3fcc84d6e14a7dae513adee6106346","title":"TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination","solicitation_number":"IL-13828","notice_type":"s","base_type":"s","posted":"2025-07-07","posted_at":null,"due_at":"2025-08-07T18:00:00Z","due_date":"2025-08-07","cancelled":null,"archived":null,"archive_date":"2025-08-22","award_number":null,"awardee_name":null,"amount":null,"link_sam":"https://sam.gov/workspace/contract/opp/4b3fcc84d6e14a7dae513adee6106346/view","enriched":false,"history":[]}],"latest_notice_id":"4b3fcc84d6e14a7dae513adee6106346","first_type":"s","notices":[{"dates":{"posted":"2025-07-07","response_deadline":{"raw":"2025-08-07T11:00:00-07:00","utc":"2025-08-07T18:00:00Z","date":"2025-08-07","time":"11:00:00","utc_offset_seconds":-25200}},"links":{"sam":"https://sam.gov/workspace/contract/opp/4b3fcc84d6e14a7dae513adee6106346/view"},"naics":{"codes":["334413"],"primary":"334413"},"title":"TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination","agency":{"office":{"code":"899011","name":"LLNS – DOE CONTRACTOR"},"subtier":{"code":"8900","name":"ENERGY, DEPARTMENT OF"},"department":{"code":"089","name":"ENERGY, DEPARTMENT OF"},"office_address":{"zip":"94551","city":"Livermore","state":"CA","country":"USA"},"organization_type":"OFFICE"},"status":{"active":false,"archive_date":"2025-08-22","archive_type":"auto15"},"contacts":[{"name":"Alex Hess","role":"primary","email":"hess12@llnl.gov","phone":"9254231283"},{"name":"Charlotte Eng","role":"secondary","email":"eng23@llnl.gov","phone":"9254221905"}],"base_type":{"code":"s","label":"Special Notice"},"notice_id":"4b3fcc84d6e14a7dae513adee6106346","provenance":{"extract":{"url":"https://s3.amazonaws.com/falextracts/Contract%20Opportunities/Archived%20Data/FY2025_archived_opportunities.csv","etag":"\"d47226e3d2c6545974b252e103f82b34-139\"","fetched_at":"2026-09-16T17:45:50.850439Z","row_sha256":"2c1de63801a76a45c292eed6e97d1987988fd3a6d17d03b22564f438664488ab","last_modified":"2026-09-13T14:49:20Z"},"updated_at":"2026-09-16T17:45:50.850439Z","first_seen_at":"2026-09-16T17:45:50.850439Z"},"description":{"text":"Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination. Background: A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses. Description: LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations. Advantages/Benefits: Value Proposition: Improved performance of SOS diodes Vital for compact high voltage pulse generators Potential Applications: Pulsed-power physics Compact high voltage pulse generators High power electronics Development Status: Current stage of technology development: TRL ? 0-2 ? 3-5 ? 5-9 LLNL has filed for patent protection on this invention. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination. The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA 94551-0808 Attention: IL-13828","origin":"extract"},"notice_type":{"code":"s","label":"Special Notice"},"schema_version":1,"solicitation_number":"IL-13828","place_of_performance":{"city":{"name":"Livermore"},"state":{"code":"CA"},"country":{"code":"USA"}}}],"due_at":"2025-08-07T18:00:00Z","due_date":"2025-08-07","closes_at":"2025-08-07T18:00:00Z","awardable":false,"dept_key":"d-089","dept_name":"ENERGY, DEPARTMENT OF","sub_key":"s-8900","sub_name":"ENERGY, DEPARTMENT OF","office_key":"o-899011","office_name":"LLNS – DOE CONTRACTOR","state":"CA","county":"06001","county_name":"Alameda County","city":"0641992","city_name":"Livermore","country":"USA","winner_key":null,"amount":null,"linked_awards":0,"cancelled":false,"archived":false,"updated_at":"2026-09-16T21:18:12.857524Z","principal_notice_id":"4b3fcc84d6e14a7dae513adee6106346","description":{"text":"Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination. Background: A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses. Description: LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations. Advantages/Benefits: Value Proposition: Improved performance of SOS diodes Vital for compact high voltage pulse generators Potential Applications: Pulsed-power physics Compact high voltage pulse generators High power electronics Development Status: Current stage of technology development: TRL ? 0-2 ? 3-5 ? 5-9 LLNL has filed for patent protection on this invention. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination. The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA 94551-0808 Attention: IL-13828","html":null,"origin":"extract"},"contacts":[{"name":"Alex Hess","role":"primary","email":"hess12@llnl.gov","phone":"9254231283"},{"name":"Charlotte Eng","role":"secondary","email":"eng23@llnl.gov","phone":"9254221905"}],"place_of_performance":{"city":{"name":"Livermore"},"state":{"code":"CA"},"country":{"code":"USA"}},"office_address":{"zip":"94551","city":"Livermore","state":"CA","country":"USA"},"naics_codes":["334413"],"award":null,"attachments":[],"awards":[],"related":[]}