# TECHNOLOGY/BUSINESS OPPORTUNITY Diffused ?-Ga2O3 Photoconductive Devices Canonical: https://abierto.us/opportunities/il13771 - Solicitation number: IL-13771 - Notice type: Special notice - Status: Closed. Deadline was March 23, 2024 at 5:00 PM EDT - Department: Department of Energy - Contracting office: LLNS – DOE Contractor (899011) - NAICS: 334419 Other Electronic Component Manufacturing - Place of performance: Livermore, California - County: Alameda County (FIPS 06001). https://abierto.us/counties/alameda-county-ca-06001 - City: Livermore. https://abierto.us/cities/livermore-ca-0641992 - First posted: February 22, 2024 - Last posted: February 22, 2024 - SAM.gov: https://sam.gov/workspace/contract/opp/90e531d35e774b91885e4f6778a4ca66/view ## Description **Opportunity:** Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop and commercialize its Diffused ?-Ga2O3 Photoconductive Devices. **Background:** Beta-gallium oxide (b-Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor that possesses outstanding physical properties for power electronics and optoelectronics. A challenge for this material is modifying it such that deep level states in the bandgap could be formed. By selecting the appropriate dopant, with both donors and transition metals (TM), b-Ga2O3 would then be a promising photoconductive material for both photoconductive semiconductor switches (PCSS) and optically addressable light valves (OALV). Currently, TM-doped layers would need to be grown by either epitaxy method, which is expensive or thinning bulk material, which produce fragile layers that are hard to process. LLNL researchers were able to develop diffused ?-Ga2O3 photoconductive devices without needing to resort to either method and use commercially available b-Ga2O3 material. **Description:** The researchers’ approach leverages the concept that dopants have high diffusivities in Ga2O3; the key lies in the selection of the appropriate dopant. This LLNL invention describes two device types that employ this design: **PCSS:** The device consists of an n-type ?-Ga2O3 wafer where the top surface is diffused with TM to form a photoconductive layer. A transparent conductor is then deposited onto this photoconductive layer. An ohmic metal contact is placed on the transparent conductor to facilitate electrical interfacing with the switch. On the opposite side of the substrate, a metal contact is placed in contact with the n-type ?-Ga2O3 to form both an ohmic contact and act as a mirror. **OALV:** The device consists of two wafers/optics that are bonded together to form a liquid crystal cell. The key innovation over other OALV designs is the replacement of bismuth silicon oxide with the diffused ?-Ga2O3 photoconductive layer. **Advantages/Benefits:** The Value Proposition is Improved performance at less manufacturing costs. LLNL’s diffused ?-Ga2O3 photoconductive devices have numerous advantages over traditional optical switches, such as: Outstanding breakdown field strength Tunable for optimal device performance. Less expensive and easier to manufacture than crystal growth equipment Potential Applications: High power microwave sources High frequency amplifiers and pulse generators OALVs Development Status: Current stage of technology development: TRL 3 LLNL has filed for patent protection on this invention. LLNL has a huge portfolio of UWBG-based photoconductive semiconductor switches and OALVs. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. **Note:** THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's Diffused ?-Ga2O3 Photoconductive Devices should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's Diffused ?-Ga2O3 Photoconductive Devices. The subject heading in an email response should include the Notice ID and/or the title of LLNL’s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. **Box 808, L-779 Livermore, CA 94551-0808 Attention:** IL-13771 ## Publications - February 22, 2024: Special notice, due March 23, 2024 at 5:00 PM EDT. Notice 90e531d35e774b91885e4f6778a4ca66. https://sam.gov/workspace/contract/opp/90e531d35e774b91885e4f6778a4ca66/view ## Points of contact - Genaro Mempin, mempin1@llnl.gov, 9254231121 - Charlotte Eng, eng23@llnl.gov, 9254221905 --- Source: SAM.gov Contract Opportunities bulk extract. Confirm deadlines on SAM.gov before responding. Cite https://abierto.us/opportunities/il13771.