# Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies

Canonical: https://abierto.us/opportunities/ba1552

- Solicitation number: BA-1552
- Notice type: Special notice
- Status: Closed. Deadline was April 20, 2026 at 2:00 AM EDT
- Department: Department of Energy
- Contracting office: Battelle Energy Alliance–doe CNTR (899050)
- NAICS: 334413 Semiconductor and Related Device Manufacturing
- Product or service code: AJ13 General Science & Technology R&D Svcs; General Science & Technology; Experimental Development
- Place of performance: Idaho Falls, Idaho
- County: Bonneville County (FIPS 16019). https://abierto.us/counties/bonneville-county-id-16019
- City: Idaho Falls. https://abierto.us/cities/idaho-falls-id-1639700
- First posted: October 23, 2025
- Last posted: March 4, 2026
- SAM.gov: https://sam.gov/workspace/contract/opp/b0baab0c522841d4ba948df363890f0d/view

## Description

High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies Description INL researchers have successfully established the parameters necessary for the deposition of high-quality superconducting zirconium nitride (ZrN) using molecular beam epitaxy (MBE). Key parameters include growth rate, temperature, flux ratios of zirconium (Zr) and nitrogen (N), and the choice of substrate.

These parameters significantly impact the crystalline quality of the ZrN, which in turn affects its physical properties. Additionally, novel methods have been developed to induce unconventional superconductivity in conventional superconductors like ZrN.

**Key Benefits Superior Quality:** MBE allows for fine-tuned growth parameters, resulting in top-quality, single-crystal ZrN superconducting films.

**Unconventional Superconductivity:** Methods for inducing unconventional superconductivity in ZrN have been conceptualized, potentially enabling more fault-tolerant computing.

**Novel Application:** ZrN has not previously been deposited using MBE, offering a unique advantage over existing superconducting thin films, which are often polycrystalline. Tunable Impurities, Defects, and stoichiometry: The precise control during deposition minimizes impurities and defects, enabling better performance and higher critical temperatures. Direct control of stoichiometry allows for tunable performance metrics such as critical field and temperature.

**Market Applications Quantum Computing:** Superconducting ZrN thin films can be used as platforms for superconducting qubits, a key component in the development of quantum computers.

**Epitaxial Superconducting Heterostructures:** The high-quality, high-uniformity films can be used to create advanced structures needed for unconventional superconducting technologies with atomic layer precision at wafer scale.

**Research and Development:** The technology can be utilized by researchers and companies focused on advancing superconducting materials and their applications.

**Fault-Tolerant Computing:** Unconventional superconducting schemes based on this technology could lead to more robust and fault-tolerant computing systems. This technology represents a significant advancement in the field of superconducting materials, with broad implications for quantum computing and other high-tech applications.

## Publications

- October 23, 2025: Special notice, due November 20, 2025 at 2:00 AM EST. Notice 1369da0b123d4b2caac7a87b82f8972a. https://sam.gov/workspace/contract/opp/1369da0b123d4b2caac7a87b82f8972a/view
- March 4, 2026: Special notice, due April 20, 2026 at 2:00 AM EDT. Notice b0baab0c522841d4ba948df363890f0d. https://sam.gov/workspace/contract/opp/b0baab0c522841d4ba948df363890f0d/view

## Points of contact

- Javier Martinez, javier.martinez@inl.gov

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Source: SAM.gov Contract Opportunities bulk extract. Confirm deadlines on SAM.gov before responding. Cite https://abierto.us/opportunities/ba1552.